| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for forming an aluminum-oxide film on a surface of an aluminum film formed on a substrate, by immersing the surface of the aluminum film into nitric acid with the concentration of 70%. Ž<P>SOLUTION: The oxide-film-forming method includes immersing the aluminum surface into nitric acid with the concentration of 70% under a condition of room temperature lower than 40°C for ten minutes or longer to form the aluminum oxide film with a thickness of 4 nm or more. The aluminum oxide film has various superior electric characteristics as a high insulative dielectric layer or a passivated layer, and can be used for a high-performance functional element of an electron device. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
|
