发明名称 |
Ceramic and method of manufacturing the same, Dielectric capacitor, semiconductor device, and element |
摘要 |
A method of manufacturing a ceramic includes forming a film which includes a complex oxide material having an oxygen octahedral structure and a paraelectric material having a catalytic effect for the complex oxide material in a mixed state, and performing a heat treatment to the film, wherein the paraelectric material is one of a layered catalytic substance which includes Si in the constituent elements and a layered catalytic substance which includes Si and Ge in the constituent elements. The heat treatment includes sintering and post-annealing. At least the post-annealing is performed in a pressurized atmosphere including at least one of oxygen and ozone. A ceramic is a complex oxide having an oxygen octahedral structure, and has Si and Ge in the oxygen octahedral structure.
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申请公布号 |
US2010207492(A1) |
申请公布日期 |
2010.08.19 |
申请号 |
US20100662617 |
申请日期 |
2010.04.26 |
申请人 |
SEIKO EPSON CORPORATION |
发明人 |
NATORI EIJI;KIJIMA TAKESHI;FURUYAMA KOICHI;TASAKI YUZO |
分类号 |
H01L41/187;C04B35/42;C04B35/45;C04B35/457;C04B35/465;C04B35/472;C04B35/475;C04B35/491;C04B35/493;C04B35/495;C04B35/497;C04B35/624;C23C14/08;C23C16/40;C23C18/12;H01L21/314;H01L21/316;H01L21/8246 |
主分类号 |
H01L41/187 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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