发明名称 Mg-CONTAINING ZnO MIXED SINGLE CRYSTAL, LAMINATE THEREOF AND THEIR PRODUCTION METHODS
摘要 The present invention can provide an Mg-containing ZnO mixed single crystal wherein the mixed single crystal comprises an Mg-containing ZnO semiconductor having a bandgap (Eg) of 3.30≦̸Eg≦̸3.54 eV, and has a film thickness of 5 μm or less. The present invention can provide a method for producing an Mg-containing ZnO mixed single crystal by liquid phase epitaxial growth, wherein the method comprises: mixing and melting ZnO and MgO as solutes and PbO and Bi2O3 (or PbF2 and PbO) as solvents; and putting a substrate into direct contact with the obtained melt solution, thereby growing the Mg-containing ZnO mixed single crystal on the substrate.
申请公布号 US2010209686(A1) 申请公布日期 2010.08.19
申请号 US20080531513 申请日期 2008.03.14
申请人 MITSUBISHI GAS CHEMICAL COMPANY, INC.;NATIONAL INSTITUTE FOR MATERIALS SCIENCE 发明人 SEKIWA HIDEYUKI;KOBAYASHI JUN;OHASHI NAOKI;SAKAGUCHI ISAO
分类号 C30B29/22;B32B5/00;C30B19/02;H01L21/368;H01L33/28 主分类号 C30B29/22
代理机构 代理人
主权项
地址