| 摘要 |
<p>PURPOSE: A semiconductor device and a method for manufacturing the same are provided to improve the operational characteristic of the semiconductor device by preventing electrical junction failures between a bit-line contact or a storage-node contact and word-lines. CONSTITUTION: A recess is formed in a semiconductor substrate(202). Word lines are formed on the lower side of the recess. The upper side of the word lines is oxidized. An insulating material fills the upper side of the word lines. A source/drain region is formed on both sides of the recess. A contact is formed in the source/drain region. Either of bit-lines(220) or a capacitor is formed on the contact.</p> |
