发明名称 SOLID-STATE IMAGING DEVICE, METHOD OF MANUFACTURING SOLID-STATE IMAGING DEVICE, METHOD OF DRIVING SOLID-STATE IMAGING DEVICE, AND ELECTRONIC APPARATUS
摘要 <P>PROBLEM TO BE SOLVED: To provide a solid-state imaging device having a global shutter function enhanced in signal-to-noise ratio by reducing generation of a dark current, and to provide a method of manufacturing the same, an electronic apparatus using the solid-state imaging device, and a driving method. <P>SOLUTION: The CCD type solid-state imaging device, which includes a light reception section for generating signal electric charges and a storage capacity section for storing and holding the signal electric charges, has an electronic shutter-adjusting layer formed. The electronic shutter-adjusting layer is formed in a region in a substrate which is opposed to the light reception section and is a desired offset region away from the storage capacity section. The solid-state imaging device has a substrate voltage source which applies a first potential to the substrate in a light-reception period, and applies a second potential to the substrate in a non-light-reception period. In the solid-state imaging device, the signal electric charges generated by the light reception section are stored in the storage capacity section in an incontinent flow manner in the light-reception period. <P>COPYRIGHT: (C)2010,JPO&INPIT
申请公布号 JP2010182887(A) 申请公布日期 2010.08.19
申请号 JP20090025347 申请日期 2009.02.05
申请人 SONY CORP 发明人 KANBE HIDEO
分类号 H01L27/146;H04N5/335;H04N5/361;H04N5/369;H04N5/374 主分类号 H01L27/146
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