发明名称 TRANSFER CHAMBER AND PARTICLE DEPOSITION PREVENTING METHOD
摘要 <P>PROBLEM TO BE SOLVED: To provide a transfer chamber and a particle deposition preventing method which can prevent particles from being deposited on a treated substrate due to an electrostatic force by removing electricity from the treated substrate without causing damage to the treated substrate. <P>SOLUTION: In a substrate treatment system 1, a transfer chamber 4 provided between a substrate treatment unit 2 and an atmosphere system transfer unit 3 includes a chamber body 51 storing a wafer W serving as the treated substrate. The chamber body 51 can be switched between a reduced pressure environment and an atmospheric pressure environment by an air supply system 52 and an exhaust system 53. The air supply system 52 includes an ionizer 60 for generating ionized gas outside the chamber body 51. The ionized gas generated by the ionizer 60 is supplied to the chamber body 51 to remove electricity from the wafer W stored in the chamber body 51. <P>COPYRIGHT: (C)2010,JPO&INPIT
申请公布号 JP2010183005(A) 申请公布日期 2010.08.19
申请号 JP20090027369 申请日期 2009.02.09
申请人 TOKYO ELECTRON LTD 发明人 YAMAWAKI JUN;OIKAWA JUNJI;NAKAYAMA HIROYUKI
分类号 H01L21/677;B65G49/00 主分类号 H01L21/677
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