发明名称 SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To reduce a deviation from a design value in characteristic values of an element, regardless of variations in in-plane direction of the substrate. SOLUTION: The semiconductor device 100 includes a plurality of divided elements (200a or 200b) formed on a substrate, each including a film in prescribed pattern having a long-axis direction and a short-axis direction, and dispersedly arranged in the same layer in an in-surface direction of the substrate. The plurality of divided elements are arranged such that long-axis directions of films of divided elements which are adjacent in the first direction are different or such that the divided elements which are adjacent in the first direction shift from each other in the second direction orthogonal to the first direction by an amount smaller than the length of the divided elements in the second direction. COPYRIGHT: (C)2010,JPO&INPIT
申请公布号 JP2010183021(A) 申请公布日期 2010.08.19
申请号 JP20090027598 申请日期 2009.02.09
申请人 RENESAS ELECTRONICS CORP 发明人 FURUMIYA MASAYUKI;NAKASHIBA YASUTAKA
分类号 H01L21/822;H01L21/82;H01L27/04 主分类号 H01L21/822
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