| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method for producing an inorganic alignment layer that gives a high pretilt angle of a liquid crystal while the layer has a smaller film thickness than a thickness of a conventional alignment layer, without requiring a surface treatment after film formation or rotation of a substrate during vapor deposition. Ž<P>SOLUTION: The method for producing the inorganic alignment layer includes a step of forming an oblique vapor deposition film comprising a plurality of oxide columnar structures on a substrate by obliquely vapor depositing oxides with respect to the substrate. The oblique vapor deposition film is formed by vapor depositing at a first vapor deposition rate and then at a second vapor deposition rate, wherein the second vapor deposition rate is larger than the first vapor deposition rate. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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