| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a structure applying stress to a channel region of a CMOS transistor having an SOI structure. Ž<P>SOLUTION: On a surface of a single-crystal silicon substrate 11, an active layer 13 of single crystal silicon is formed which includes a first element region 13A where an n-channel MOS transistor 10A is formed, and a second element region 13B where a p-channel MOS transistor 10B is formed, the first element region and second element region being defined by an element isolation region 13I. A silicon oxide film is formed between the silicon substrate and active layer, and extends continuously to below the first element region and to below the second element region. The silicon oxide film in a channel region of the n-channel MOS transistor has a maximum film thickness and decreases in film thickness in a gate length direction, and the silicon oxide film in a channel region of the p-channel MOS transistor has a minimum film thickness or no thickness, and increases the film thickness from the channel region in the gate length direction. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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