| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor memory device in which conflict between read data and a mode signal does not occur in a data input/output circuit. Ž<P>SOLUTION: The semiconductor memory device includes: a mode register 54 in which a mode signal is set; a data amplifier 64 that amplifies the read data read from a memory cell array 70; a data bus 65 to which the read data amplified by the data amplifier are transmitted; a data input/output circuit 100 that outputs a signal on the data bus 65 to the outside; and a mode signal output circuit 200 that outputs the mode signal set in the mode register 64 to the data bus 65. Since the mode signal is not interrupted halfway along the data input/output circuit, but supplied to the data bus that connects the data amplifier to the data input/output circuit, no collision of the read data with the mode signal occurs in the data input/output circuit. Ž<P>COPYRIGHT: (C)2010,JPO&INPIT Ž
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