| 摘要 |
An apparatus for forming a dielectric layer includes a process chamber configured for disposing a substrate therein, a gas inlet for delivering a mixture gas to the process chamber, and an RF generator for producing a plasma from the mixture gas. The plasma includes an oxygen-containing element and a fluorocarbon-containing element. The apparatus also has a heating element configured for maintaining the chamber temperature at a desired process temperature, for example, at 800° C. or lower, and a connector to a vacuum pump for maintaining a process pressure. The apparatus is configured for using the plasma to convert a surface portion of the substrate into an oxidized dielectric material.
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