发明名称 |
Methods of Manufacturing Semiconductor Devices Having Contact Plugs in Insulation Layers |
摘要 |
Methods of manufacturing semiconductor devices are provided in which a first contact plug is formed on a first active region in a substrate and a second contact plug is formed on a second active region in the substrate. A height of an upper surface of the second contact plug from the substrate is greater than a height of an upper surface of the first contact plug from the substrate. A third contact plug is formed on the second contact plug. A first spacer is formed on a side surface of the third contact plug. A third interlayer insulation layer is formed that covers the third contact plug. The third interlayer insulation layer is patterned to form a third opening that exposes the first contact plug. A fourth contact plug is formed in the third opening that is electrically connected to the first contact plug.
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申请公布号 |
US2010210087(A1) |
申请公布日期 |
2010.08.19 |
申请号 |
US20100766137 |
申请日期 |
2010.04.23 |
申请人 |
SUNG JOON-HO;LEE JU-YONG;PARK MI-KYUNG;CHUNG TAE-YOUNG |
发明人 |
SUNG JOON-HO;LEE JU-YONG;PARK MI-KYUNG;CHUNG TAE-YOUNG |
分类号 |
H01L21/768;H01L21/02 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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