发明名称 SEMICONDUCTOR MEMORY DEVICE PROVIDED WITH RESISTANCE CHANGE ELEMENT
摘要 A latch circuit is connected to a first common node, a first, second output node, and a first, second connection node. A first resistance change element is connected to the first connection node, and a second common node. A second resistance change element is connected to the second connection node, and the second common node. When a first data is stored, voltages of the first common node, second common node, and first output node are set at a first reference voltage, and a voltage of the second output node is set at a second reference voltage. When a second data is stored, voltages of the first common node, second common node, and second output node are set at the first reference voltage, and a voltage of the first output node is set at the second reference voltage.
申请公布号 US2010208512(A1) 申请公布日期 2010.08.19
申请号 US20100709256 申请日期 2010.02.19
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 UEDA YOSHIHIRO
分类号 G11C11/00 主分类号 G11C11/00
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