ATOMIC LAYER GROWING APPARATUS AND THIN FILM FORMING METHOD

摘要

An atomic layer growing apparatus introduces an organic metal gas containing hydrogen into a film forming container and has the organic metal components adsorbed on a substrate. Then, the apparatus generates plasma by introducing an oxidizing gas or a nitriding gas into the film forming container, and the organic metal components deposited on the substrate are oxidized or nitrided. When the plasma is generated, the apparatus detects the emission intensity of light emitted on the substrate at a predetermined wavelength through an observation window provided on the film forming container. When the detected emission intensity is a predetermined value or less, the apparatus stops generating plasma.