| 发明名称 |
SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING SAME AND PLASMA DOPING SYSTEM |
| 摘要 |
<p>A fin-type semiconductor region (13) is formed on a substrate (11). A first impurity which generates a donor level or an acceptor level in a semiconductor is introduced into the upper section and the side section of the fin-type semiconductor region (13), and furthermore, as a second impurity, oxygen or nitrogen is introduced into the upper section and the side section of the fin-type semiconductor region (13).</p> |
| 申请公布号 |
WO2010092748(A1) |
申请公布日期 |
2010.08.19 |
| 申请号 |
WO2010JP00285 |
申请日期 |
2010.01.20 |
| 申请人 |
PANASONIC CORPORATION;OKUMURA, TOMOHIRO;KAI, TAKAYUKI;SASAKI, YUICHIRO |
发明人 |
OKUMURA, TOMOHIRO;KAI, TAKAYUKI;SASAKI, YUICHIRO |
| 分类号 |
H01L29/786;H01L21/265;H01L21/3065;H01L21/336 |
主分类号 |
H01L29/786 |
| 代理机构 |
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