发明名称 |
SEMICONDUCTOR ELEMENT, METHOD OF MANUFACTURING THE SAME, AND ELECTRONIC APPARATUS |
摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a technique capable of securing the rigidity of an element substrate and efficiently supplying hydrogen to a gate insulating film, at the same time. <P>SOLUTION: A method of manufacturing a semiconductor element has the steps of: forming a transistor 3 and wiring layers 12 and 16 electrically connected therewith on a first surface of an element substrate 2; forming a plurality of holes 21 in a second surface opposite to the first surface of the element substrate 2; and supplying hydrogen to a gate insulating film 5 of the transistor 3 from the second surface of the element substrate 2 through the holes 21. <P>COPYRIGHT: (C)2010,JPO&INPIT</p> |
申请公布号 |
JP2010182764(A) |
申请公布日期 |
2010.08.19 |
申请号 |
JP20090023221 |
申请日期 |
2009.02.04 |
申请人 |
SONY CORP |
发明人 |
NAKAMURA AKIHIRO |
分类号 |
H01L21/336;H01L21/02;H01L27/12;H01L27/146;H01L29/78;H01L29/786 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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