QUARTZ GLASS CRUCIBLE FOR PULLING SINGLE-CRYSTAL SILICON AND PROCESS FOR PRODUCING SINGLE-CRYSTAL SILICON

摘要

A quartz glass crucible for pulling single-crystal silicon, characterized by having a crystallization accelerator-containing layer as an inner surface.  The crucible is further characterized in that when single-crystal silicon is pulled up, crystallized regions are formed as spots in the inner surface by the action of the crystallization accelerator.  The crucible suffers no separation of the crystallized substance generating scatteringly in the inner surface.  Unlike the case where a crystal layer has been formed over the entire inner surface, the crucible suffers neither the phenomenon in which some of the crystal layer sheds off as minute pieces to form outgassing holes nor the phenomenon in which molten silicon penetrates through the outgassing holes formed by the shedding of minute pieces into the space between the crystal layer and the underlying glass layer.  The crucible can thereby attain a high yield.  Provided is a process for producing single-crystal silicon using the quartz glass crucible.