SEMICONDUCTOR LIGHT EMITTING DIODE AND METHOD OF PRODUCING SAME

摘要

Provided is a semiconductor light emitting diode that maintains a low forward voltage while achieving improved light emission output by positioning an upper side electrode part, which is an electrode part on the light extraction side, and an intermediate electrode part, which is an electrode part paired with the upper side electrode part, in a suitable positional relationship. Also provided is a method of producing the same. The semiconductor light emitting diode (1) comprises a support substrate (2), the upper surface side of which is provided with an intermediate layer (3) including intermediate electrode parts (3a), a second conductivity type semiconductor layer (4), an active layer (5), a first conductivity type semiconductor layer (6), and upper side electrode parts (7) in that order, and the lower surface side of which is provided with a lower side electrode layer (8). The intermediate layer (3) comprises at least one intermediate electrode part (3a) extending in a line or island shape. When an upper side electrode part (7) and an intermediate electrode part (3a) are projected on a virtual plane parallel to the upper surface of the support substrate (2), the upper side electrode part (7) and the intermediate electrode part (3a) are in a positional relationship in which the same are offset from each other, the contour line of at least either the upper side electrode part (7) or the intermediate electrode part (3a) is extended by a predetermined "waviness degree", and the distance (d) between the contour lines of the upper side electrode part (7) and the intermediate electrode part (3a) opposing the upper side electrode part (7) is partially shortened.