| 摘要 |
PROBLEM TO BE SOLVED: To prevent the development of strain in a semiconductor layer in an area near an interface between a semiconductor layer and an opening side end of an electrode in a semiconductor light-emitting device in which an electrode with an opening is provided on the semiconductor layer and a dielectric layer is provided in the opening. SOLUTION: The element has an active layer 106, a first electrode 121 and a second electrode 131 for injecting current to the active layer, a semiconductor layer 115 between the active layer and the first electrode and a dielectric layer 141 which is provided on the semiconductor layer and allows light from the active layer to pass through. The first electrode is provided on the semiconductor layer and has an opening 125 for allowing light from the active layer to pass through, a first electrode layer 122 provided in contact with the semiconductor layer, and a second electrode layer 123 provided on the first electrode layer. The first electrode layer has smaller reactivity to the semiconductor layer than that of the second electrode layer. The dielectric layer is provided in the opening and an opening side end of the first electrode layer is extended from on the semiconductor layer 115 to on the dielectric layer 141. COPYRIGHT: (C)2010,JPO&INPIT |
