| 摘要 |
PROBLEM TO BE SOLVED: To reduce a leakage current between source and drain of a nitride-based compound semiconductor formed on a substrate. SOLUTION: In a transistor 100, a gate electrode 12, a source electrode 13, and a drain electrode 14 are respectively formed on the surface of the nitride-based compound semiconductor 11 on a silicon substrate (not shown). At least one of the source electrode 13 and drain electrode 14 is surrounded with an auxiliary electrode 15 connected to the gate electrode 12. A leakage current path is cut off by formation of a depletion layer on the nitride-based compound semiconductor 11 under the auxiliary electrode 15. Accordingly, the leakage current between the source and drain can be reduced effectively. COPYRIGHT: (C)2010,JPO&INPIT |
