| 摘要 |
PROBLEM TO BE SOLVED: To suppress a difference in machining shape of a worked film when forming a pattern by means of a sidewall transfer process. SOLUTION: A silicon oxide film 11 is formed on a silicon nitride film 10 and patterned by lithography. The silicon oxide film 11 is slimmed by a slimming technology, and an amorphous silicon film 13 is deposited along an upper surface and a side face of the silicon oxide film 11 and along an upper surface of the silicon nitride film 10. The amorphous silicon film 13 is anisotropically etched, thereby making it remain like a spacer along the side face of the silicon oxide film 11. Then, etching is performed to make the upper end 11a of the silicon oxide film 11 lower than the upper end 13a of the amorphous silicon film 13, and an upper surface 13b of the amorphous silicon film 13 is formed to be an upwardly protruding curved surface. COPYRIGHT: (C)2010,JPO&INPIT
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