| 摘要 |
A temperature compensated force detection element is provided with a substrate, an insulation layer disposed above the substrate, and a p-type semiconductor layer disposed above the insulation layer, and a positive electrode and a negative electrode disposed apart from each other above the p-type semiconductor layer. A gauge portion being electrically connected to the positive electrode and having a higher impurity concentration than the p-type semiconductor layer, and an n-type region electrically connected to the negative electrode are formed in the p-type semiconductor layer.
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