发明名称 |
METHOD OF FABRICATING SEMICONDUCTOR DEVICE HAVING BURIED WIRING |
摘要 |
A method of fabricating a semiconductor device can include forming a trench in a semiconductor substrate, forming a first conductive layer on a bottom surface and side surfaces of the trench, and selectively forming a second conductive layer on the first conductive layer to be buried in the trench. The second conductive layer may be formed selectively on the first conductive layer by using an electroless plating method or using a metal organic chemical vapor deposition (MOCVD) or an atomic layer deposition (ALD) method.
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申请公布号 |
US2010210105(A1) |
申请公布日期 |
2010.08.19 |
申请号 |
US20100704358 |
申请日期 |
2010.02.11 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
BAEK JONG-MIN;PARK HEE-SOOK;CHEONG SEONG-HWEE;CHOI GIL-HEYUN;LEE BYUNG-HAK;CHA TAE-HO;PARK JAE-HWA;KIM SU-KYOUNG |
分类号 |
H01L21/768 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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