OXIDE SEMICONDUCTOR MATERIAL, METHOD FOR MANUFACTURING OXIDE SEMICONDUCTOR MATERIAL, ELECTRONIC DEVICE AND FIELD EFFECT TRANSISTOR

摘要

The present invention provides an oxide semiconductor material, a method for manufacturing such oxide semiconductor material, an electronic device and a field effect transistor. The oxide semiconductor material contains Zn, Sn, and O, does not contain In, and has an electron carrier concentration higher than 1 × 10 15 /cm 3 and less than 1 × 10 18 /cm 3 . The electronic device comprises a semiconductor layer formed of the oxide semiconductor material, and an electrode provided on the semiconductor layer. The field effect transistor comprises a source electrode and a drain electrode which are arranged in separation from each other on the semiconductor layer; and a gate electrode placed at a position where the gate electrode can apply a bias potential to a region of the semiconductor layer positioned between the source electrode and the drain electrode.