发明名称 A REFLECTANCE MEASUREMENT SYSTEM OF EUV PHOTOLITHOGRAPHY APPARATUS
摘要 PURPOSE: A reflectance measurement system of an extremely ultra-violet light(EUV) photolithography machine is provided to optimize an EUV photolithography process by obtaining accurate information related to light. CONSTITUTION: Light source generates the light in an EUV wavelength region. Relay mirrors(20b, 20c) collect and transmit the light from the light source. A photo-mask mirror(30) receives and reflects the light from the relay mirrors. A first light receiving unit is arranged on a light path from the photo-mask mirror and collects the light. A reflective mirror system receives the light from the photo-mask mirror. A second light receiving unit(60) collects the light from the reflective mirror system.
申请公布号 KR20100091060(A) 申请公布日期 2010.08.18
申请号 KR20090010343 申请日期 2009.02.09
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 LEE, DONG GUN;KIM, SEONG SUE;KIM, DONG WAN
分类号 H01L21/027;G01B11/00;G03F7/20 主分类号 H01L21/027
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