发明名称 |
Method for fabricating solar cell using inductively coupled plasma chemical vapor deposition |
摘要 |
<p>A method for fabricating a solar cell using inductively coupled plasma chemical vapor deposition (ICP-CVD) including a first electrode, a P layer, an intrinsic layer, an N-type layer and a second electrode. The method includes forming an intrinsic layer including a hydrogenated amorphous silicon (Si) thin film by an inductively coupled plasma chemical vapor deposition (ICP-CVD) device using mixed gas including hydrogen (H 2 ) gas and silane (SiH 4 ) gas. In the mixed gas, silane gas is in a ratio of 8 to10 relative to mixed gas.</p> |
申请公布号 |
EP2219230(A2) |
申请公布日期 |
2010.08.18 |
申请号 |
EP20090173987 |
申请日期 |
2009.10.23 |
申请人 |
KOREAN INSTITUTE OF INDUSTRIAL TECHNOLOGY |
发明人 |
JEONG, CHAEHWAN;LEE, JONG HO;KIM, HO-SUNG;BOO, SEONGJAE |
分类号 |
H01L31/18;C23C16/24;C23C16/507;H01L21/205;H01L31/0368;H01L31/0376;H01L31/0392;H01L31/075;H01L31/077;H01L31/20 |
主分类号 |
H01L31/18 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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