| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a composition for forming an overlay film on a photoresist without inducing intermixing with the photoresist film, the composition having sufficient transmittance at an exposure light wavelength, in particular at 248 nm (KrF) and 193 nm (ArF), and to form an overlay film showing no deterioration in performance when subjected to dry exposure and easily dissolved in an alkali developing solution. <P>SOLUTION: The overlay film forming composition to be applied on a photoresist film comprises a resin which dissolves in a developing solution after irradiated with radiation, and at least one of an acid and a radiation-sensitive acid generating agent. The acid used in the overlay film forming composition dissolves in alcohol and has a sulfo group in the molecule. The radiation-sensitive acid generating agent dissolves in alcohol and generates an acid upon irradiation with radiation. <P>COPYRIGHT: (C)2007,JPO&INPIT |
