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发明名称
Method of forming gate oxide layer in semiconductor device
摘要
申请公布号
KR100976698(B1)
申请公布日期
2010.08.18
申请号
KR20030039552
申请日期
2003.06.18
申请人
发明人
分类号
H01L21/336
主分类号
H01L21/336
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代理人
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地址
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