发明名称 Transparent electrodes for semiconductor thin film devices
摘要 <p>A method of producing a transparent electrode suitable for use in an organic semiconductor photovoltaic device. First and second silanes (3) are deposited from the vapour phase on a substrate (1) and bind to the surface of the substrate. A metal film (4) is then deposited from the vapour phase and binds to both the first and second silanes so as to produce a transparent metal layer having a thickness which is no greater than about 15 nanometres. The first silane is a non-amino functional silane and the second silane is an aminofunctional silane. The electrode may be flexible, using a polymer substrate (1). The metal film (4) may be provided with a plurality of apertures (5), provided for example by masking the substrate with microspheres (2) while depositing the metal and subsequently removing the microspheres, and/or annealing the metal so that apertures appear.</p>
申请公布号 GB201011118(D0) 申请公布日期 2010.08.18
申请号 GB20100011118 申请日期 2010.06.30
申请人 UNIVERSITY OF WARWICK 发明人
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代理机构 代理人
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