| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a method for alignment by which such high-accuracy alignment can be realized that errors caused by the aberration of a projection optical system used for pattern transfer and those caused by working become equal to each other and, consequently, the positional deviations of all patterns become equal to each other, and to provide a method for inspecting overlay and a photomask used for these methods. SOLUTION: At the time of successively forming alignment marks 41 and first and second overlay inspection marks 42 on a wafer 1 together with a device pattern by using first and second photomasks 21, the marks 41 and 42 are formed to have the partial dimension and shape of the device pattern or equivalent dimensions and shapes. Consequently, the marks 41 and 42 become to have positional deviation errors caused by the aberration of an exposing optical system used for pattern transfer and the positional deviation errors caused by the succeeding working. Therefore, high-accuracy alignment and positional correction can be realized by accurately grasping the positional deviations of the marks 41 and 42.</p> |
