METHOD OF FABRICATING SEMICONDUCTOR DEVICE HAVING DUAL GATE

摘要

PURPOSE: A method for manufacturing a dual gate semiconductor device is provided to regulate threshold voltages of elements with each gate by regulating the work function of the dual gate. CONSTITUTION: A gate insulating film(113, 116), a first capping layer, and a barrier layer are successively formed on a substrate. The first capping layer and the barrier layer in a first region(R1) are eliminated to expose the gate insulating film in the first region. A second capping layer is formed on the upper side of the gate insulating film on the first region and on the upper side of a barrier layer in the second region. The substrate with the second capping layer is thermally treated. Materials included in the first capping layer and the second capping layer are diffused into the gate insulating film in the first region and the gate insulating film in the second region.