METHOD FOR FABRICATING ISOLATION LAYER IN SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING NONVOLATILE MEMORY DEVICE USING THE SAME

摘要

PURPOSE: A method for manufacturing the element isolation layer of a semiconductor device and a method for manufacturing a non-volatile memory device using the same are provided to prevent the deterioration of the operating characteristic of the non-volatile memory device by preventing the generation of moat in the element isolation layer. CONSTITUTION: A hard mask pattern(37) is formed on a substrate(31). A part of the hard mask pattern is transformed to form a protective film(35A). The substrate is etched using the hard mask pattern and the protective film as an etching barrier to form a trench. An element isolation film is formed by filing an insulating material in the trench. The hard mask pattern is eliminated.