NONVOLATILE MEMORY DEVICE AND PROGRAMMING METHOD THEREOF

摘要

PURPOSE: A nonvolatile memory device and a programming method thereof are provided to prevent non-selected memory cell from being programmed by differently setting a bias condition for self boosting in a program operation. CONSTITUTION: A memory cell array(110) includes a plurality of memory cells. A control logic unit(120) programs the plurality of memory cells and divides a plurality of program loops into two program loop sections. The control logic unit differently sets a bias condition for self boosting at each program loop section. A voltage generator(130) generates voltages to be applied to a selected word line, a non-selected word line, a string selection line, a ground selection line, and a common source line.