发明名称 CONTROLLED ANNEALING METHOD
摘要 A method for rapid thermal annealing is disclosed. As the substrate is inserted into an annealing chamber, it begins to heat due to the heat radiating from chamber components that were heated when a previous substrate was annealed. Thus, the leading edge of the substrate may be at an elevated temperature while the trailing edge of the substrate may be at room temperature while the substrate is inserted causing a temperature gradient is present across the substrate. Once the substrate is completely inserted into the annealing chamber, the temperature gradient may still be present. By compensating for the temperature gradient across the substrate, the substrate may be annealed uniformly.
申请公布号 KR100976649(B1) 申请公布日期 2010.08.18
申请号 KR20080046588 申请日期 2008.05.20
申请人 发明人
分类号 H01L21/324 主分类号 H01L21/324
代理机构 代理人
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