| 摘要 |
<p>A reflective TFT substrate which can be operated for a prolonged period of time due to the presence of a protective insulating film, is free from occurrence of crosstalk, and is capable of significantly reducing manufacturing cost by decreasing the production steps in the production process. A reflective TFT substrate 1 comprises a substrate 10; a gate electrode 23 and a gate wire 24; a gate insulating film 30; an n-type oxide semiconductor layer 40; a metal layer 60 formed with a channel part 41 interposed therebetween; and a protective insulating film 80 which covers the upper part of the glass substrate 10 on which a pixel electrode 67, a drain wire pad 68 and a gate wire pad 25 are exposed, wherein the metal layer 60 functions at least as a source wire 65, a drain wire 66, a source electrode 63, a drain electrode 64 and the pixel electrode 67.</p> |
