| 摘要 |
<p>Disclosed is a semiconductor light emitting device (100). The semiconductor light emitting device includes a light emitting structure (110) including a first conductive semiconductor layer (111), an active layer (113) below the first conductive semiconductor layer, and a second conductive semiconductor layer below the active layer (115); a channel layer (120) below the light emitting structure, in which an inner portion of the channel layer is disposed along an outer peripheral portion (118) of the light emitting structure (110) and an outer portion of the channel layer extends out of the light emitting structure; a first electrode (119) on the light emitting structure (110) and a second electrode layer (130) below the light emitting structure.</p> |
