SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE

摘要

PURPOSE: A semiconductor integrated circuit device is provided to improve the reliability by preventing the generation of short-circuit in adjacent sharing contacts which are formed on a gate electrode. CONSTITUTION: A gate line(130) is expanded to one direction. An active region is adjacently arranged to one lateral end of the gate line and is expanded to the other direction. A silicide film is formed on the upper side of the active region, on both sidewalls of the lateral end of the gate line, and on the end part sidewall of the gate line. A spacer(140) is formed on the sidewalls of the other lateral end of the gate line. A sharing contact(250) is formed on the one lateral end of the gate line.