发明名称 |
Method of manufacturing an epitaxial semiconductor substrate and method of manufacturing a semiconductor device |
摘要 |
In an example embodiment of the method of manufacturing an epitaxial semiconductor substrate, a gettering layer is grown over a semiconductor substrate. An epitaxial layer may then be formed over the gettering layer, and a semiconductor device may be formed on the epitaxial layer.
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申请公布号 |
US7776723(B2) |
申请公布日期 |
2010.08.17 |
申请号 |
US20050192085 |
申请日期 |
2005.07.29 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
LEE HO;SHIN DONGSUK;UENO TETSUJI;LEE SEUNG-HWAN;RHEE HWA-SUNG |
分类号 |
H01L21/322 |
主分类号 |
H01L21/322 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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