Semiconductor memory device and latency signal generating method thereof

摘要

A latency signal generating method and a corresponding semiconductor memory device, among other things, are disclosed. Such a method includes: receiving a clock signal for the semiconductor memory device; receiving a mode characterization signal; providing the DQS; and adapting the duration of a preamble state of the DQS according to the mode characterization signal to promote conformance of a strobe state of the DQS with the clock signal.