发明名称 |
Integrated circuit device and fabrication method therefor |
摘要 |
In a temperature sensor section of a semiconductor integrated circuit device, wires of the topmost wiring layer of a multi-layer wiring structure are formed. A sheet-like temperature monitor element of vanadium oxide is provided between two of the wires in such a way as to cover the two wires. Accordingly, the temperature monitor element is connected between the two wires of an underlying wiring layer of the multi-layer wiring structure through two vias and the two wires of the topmost wiring layer. |
申请公布号 |
US7777288(B2) |
申请公布日期 |
2010.08.17 |
申请号 |
US20050052215 |
申请日期 |
2005.02.08 |
申请人 |
NEC ELECTRONICS CORPORATION;NEC CORPORATION |
发明人 |
KAWAHARA NAOYOSHI;MURASE HIROSHI;OHKUBO HIROAKI;KIKUTA KUNIKO;NAKASHIBA YASUTAKA;ODA NAOKI;SASAKI TOKUHITO;ITO NOBUKAZU |
分类号 |
H01L21/768;H01L31/058;H01C7/10;H01L21/822;H01L23/58;H01L27/04;H01L27/06;H01L27/16 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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