发明名称 |
Etching apparatus, a method of controlling an etching solution, and a method of manufacturing a semiconductor device |
摘要 |
An etching apparatus includes a chamber containing an etching solution including first and second components and water, a concentration of the water in the etching solution is at a specified level or lower; a circulation path circulating the etching solution; a concentration controller sampling the etching liquid from the circulation path and controls concentrations of the etching solution respectively; and a refilling chemical liquid feeder feeding a refilling chemical liquid including the first component having a concentration higher than the first component in the etching solution.
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申请公布号 |
US7776756(B1) |
申请公布日期 |
2010.08.17 |
申请号 |
US20070878965 |
申请日期 |
2007.07.30 |
申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
OKUCHI HISASHI;IIMORI HIROYASU;SAITO MAMI;OGAWA YOSHIHIRO;TOMITA HIROSHI;NADAHARA SOICHI |
分类号 |
C23F1/08;H01L21/302;B44C1/22;C23F1/00;C23F1/16;H01L21/00;H01L21/306;H01L21/311;H01L21/461 |
主分类号 |
C23F1/08 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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