发明名称 Etching apparatus, a method of controlling an etching solution, and a method of manufacturing a semiconductor device
摘要 An etching apparatus includes a chamber containing an etching solution including first and second components and water, a concentration of the water in the etching solution is at a specified level or lower; a circulation path circulating the etching solution; a concentration controller sampling the etching liquid from the circulation path and controls concentrations of the etching solution respectively; and a refilling chemical liquid feeder feeding a refilling chemical liquid including the first component having a concentration higher than the first component in the etching solution.
申请公布号 US7776756(B1) 申请公布日期 2010.08.17
申请号 US20070878965 申请日期 2007.07.30
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 OKUCHI HISASHI;IIMORI HIROYASU;SAITO MAMI;OGAWA YOSHIHIRO;TOMITA HIROSHI;NADAHARA SOICHI
分类号 C23F1/08;H01L21/302;B44C1/22;C23F1/00;C23F1/16;H01L21/00;H01L21/306;H01L21/311;H01L21/461 主分类号 C23F1/08
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