发明名称 |
Memory programming method and data access method |
摘要 |
A memory programming method is provided. A first programming operation is performed to program a multi level cell from an initial state to a first target state, which corresponds to a storage data and has a first threshold voltage range. A flag bit of the NAND flash is set to a first state to indicate that the first programming operation has been performed. A second programming operation is performed to program the multi level cell from the first target state to a second target state, which corresponds to the storage data and has a second threshold voltage range. The flag bit is set to a second state to indicate that the second programming operation has been performed.
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申请公布号 |
US7778087(B2) |
申请公布日期 |
2010.08.17 |
申请号 |
US20080335784 |
申请日期 |
2008.12.16 |
申请人 |
POWERCHIP SEMICONDUCTOR CORP. |
发明人 |
TU CHUN-YI;TSENG TE-CHANG;ARAKAWA HIDEKI;NAKAYAMA TAKESHI |
分类号 |
G11C16/04 |
主分类号 |
G11C16/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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