发明名称 Page buffer, memory device having the page buffer and method of operating the same
摘要 A page buffer includes a first latch coupled between a sensing node and a data input/output node for storing data to be programmed. The sensing node is coupled to a bit line corresponding to an MLC selected for programming. The data input/output node receives/outputs data. A second latch is coupled to the sensing node for performing a program, verifying or read operation. A first switching means is coupled between the first latch and the sensing node for transmitting data stored in the first latch to the bit line through the sensing node when the program operation is performed. A second switching means is coupled to a first node of the second latch and the sensing node for verifying a first program operation. A third switching means is coupled between a second node of the second latch and the sensing node for verifying a second program operation.
申请公布号 US7778091(B2) 申请公布日期 2010.08.17
申请号 US20080019938 申请日期 2008.01.25
申请人 HYNIX SEMICONDUCTOR INC. 发明人 PARK SE-CHUN;WANG JONG-HYUN
分类号 G11C7/10 主分类号 G11C7/10
代理机构 代理人
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