| 摘要 |
A method includes the steps of: forming a first insulation film on a substrate; forming a hole in the first insulation film; forming a lower electrode on a bottom surface and a sidewall surface of the hole; forming a capacitor insulation film on the lower electrode; forming a second conductive layer on the capacitor insulation film; forming a second insulation film on the second conductive layer so that the second insulation film fills a recess corresponding to the hole; forming a resist mask on the second insulation film so that the resist mask covers the recess; patterning the second insulation film by using the resist mask; and patterning the second conductive layer and the capacitor insulation film by using the patterned second insulation film as a hard mask. By dry etching using a hard mask, a dielectric capacitor having a three-dimensionally stacked structure can be formed with a high yield.
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