发明名称 |
Multi-chamber system having compact installation set-up for an etching facility for semiconductor device manufacturing |
摘要 |
A multi-chamber system of an etching facility for manufacturing semiconductor devices occupies a minimum amount of floor space in a clean room by installing a plurality of processing chambers in multi-layers and in parallel along a transfer path situated between the processing chambers. The multi-layers number 2 to 5, and the transfer path can be rectangular in shape and need only be slightly wider than the diameter of a wafer. The total width of the multi-chamber system is the sum of the width of one processing chamber plus the width of the transfer path.
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申请公布号 |
US7776226(B2) |
申请公布日期 |
2010.08.17 |
申请号 |
US20090512106 |
申请日期 |
2009.07.30 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KIM KI-SANG;JEOUNG GYU-CHAN;KWAG GYU-HWAN |
分类号 |
B44C1/22;H01L21/302;B65G1/00;H01L21/00;H01L21/306;H01L21/3065;H01L21/677 |
主分类号 |
B44C1/22 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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