发明名称 Optical devices featuring textured semiconductor layers
摘要 A semiconductor sensor, solar cell or emitter or a precursor therefore having a substrate and textured semiconductor layer deposited onto the substrate. The layer can be textured as grown on the substrate or textured by replicating a textured substrate surface. The substrate or first layer is then a template for growing and texturing other semiconductor layers from the device. The textured layers are replicated to the surface from the substrate to enhance light extraction or light absorption. Multiple quantum wells, comprising several barrier and quantum well layers, are deposited as alternating textured layers. The texturing in the region of the quantum well layers greatly enhances internal quantum efficiency if the semiconductor is polar and the quantum wells are grown along the polar direction. This is the case in nitride semiconductors grown along the polar [0001] or [000-1] directions.
申请公布号 US7777241(B2) 申请公布日期 2010.08.17
申请号 US20050107150 申请日期 2005.04.15
申请人 THE TRUSTEES OF BOSTON UNIVERSITY 发明人 MOUSTAKAS THEODORE D.;CABALU JASPER S.
分类号 H01L33/22;H01L29/15;H01L29/20;H01L29/24;H01L31/0236;H01L31/0352;H01L31/18;H01L33/24;H01L33/32 主分类号 H01L33/22
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