| 摘要 |
Embodiments of the invention contemplate high efficiency emitters in solar cells and novel methods for forming the same. One embodiment of the improved emitter structure, called a high-low type emitter, optimizes the solar cell performance by equally providing low contact resistance to minimize ohmic losses and isolation of the high surface recombination metal-semiconductor interface from the junction to maximize cell voltage. Another embodiment, called an alternating doping type emitter, provides regions of alternating doping type for use with point contacts in the back-contact solar cells. One embodiment of the methods includes depositing and patterning a doped or undoped dielectric layer on a surface of a substrate, implanting a fast-diffusing dopant and/or a slow-diffusing dopant into the substrate either simultaneously or sequentially, and annealing the substrate to drive in the dopants. Another embodiment of the methods includes using a physical mask to form a patterned dopant distribution in a substrate.
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