| 摘要 |
A light emitting device which includes: a substrate; an n-type semiconductor layer which is composed of a nitride semiconductor, formed on the substrate and has an n-side electrode; a p-type semiconductor layer which is composed of a nitride semiconductor, and stacked above the n-type semiconductor layer; a light emitting layer which is disposed between the n-type semiconductor layer and the p-type semiconductor layer; a p-side electrode which is disposed on a transparent electrode formed on the p-side electrode in a light emitting area; a plurality of protrusions and depressions in an area other than the light emitting area; and an insulation film on an area except areas of the n-side electrode and the p-side electrode, wherein the n-side electrode and the p-side electrode are arranged on a same side of the substrate, wherein a thickness of the insulation film on a top of the protrusions and depressions is thicker than a thickness of the insulation film in the light emitting area.
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