发明名称 |
Non-volatile memory device and programming method |
摘要 |
Provided are a non-volatile memory device and a programming method. The programming method includes applying a program voltage to a selected word line, applying an elevated pass voltage to word lines adjacent to the selected word line in a plurality of word lines, and applying a pass voltage to remaining word lines in the plurality of word lines.
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申请公布号 |
US7778082(B2) |
申请公布日期 |
2010.08.17 |
申请号 |
US20080186644 |
申请日期 |
2008.08.06 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
SHIN YOO-CHEOL;CHOI JUNG-DAL |
分类号 |
G11C11/34 |
主分类号 |
G11C11/34 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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