| 摘要 |
PURPOSE: A semiconductor device and a method for manufacturing the same are provided to improve the electrical characteristic of a thin film transistor using an oxide semiconductor film. CONSTITUTION: A gate electrode layer(401) and a gate insulating layer(402) are successively formed on a substrate with an insulating surface. A first oxide semiconductor layer(403) includes In, Sn, SiO_x. A source region and a drain region are contact with the first oxide semiconductor layer. The source region, the drain region, and a pixel electrode are formed by the second oxide semiconductor layer including In, Sn, O. |
